cph5871 no. a1401-1/7 61312 tkim/12809pe msim tc-00001794 sanyo semiconductors data sheet http:// semicon.sanyo.com/en/network ordering number : ENA1401A features ? composite type with a n-channel sillicon mosfet and a schottky barrier diode contained in one package facilitating high-density mounting ? halogen free compliance ? protection diode in ? [mosfet] ? ultrahigh-speed switching ? 1.8v drive ? [sbd] ? short reverse recovery time ? low forward voltage speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss 30 v gate-to-source voltage v gss 12 v drain current (dc) i d 3.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 14 a allowable power dissipation p d when mounted on ceramic substrate (600mm 2 0.8mm) 1unit 0.9 w channel temperature tch 150 c storage temperature tstg --55 to +125 c [sbd] repetitive peak reverse voltage v rrm 30 v nonrepetitive peak reverse surge voltage v rsm 35 v average output current i o 1a surge forward current i fsm 50hz sine wave, 1 cycle 10 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c package dimensions unit : mm (typ) 7017a-005 cph5871 product & package information ? package : cph5 ? jeita, jedec : sc-74a, sot-25 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection yz lot no. tl 543 12 mosfet : n-channel silicon mosfet sbd : schottky barrier diode general-purpose switching device applications 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode sanyo : cph5 2 1 4 53 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 cph5871-tl-h
cph5871 no. a1401-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [mosfet] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =2a 2.0 3.4 s static drain-to-source on-state resistance r ds (on)1 i d =2a, v gs =4.5v 40 52 m r ds (on)2 i d =1a, v gs =2.5v 53 74 m r ds (on)3 i d =0.5a, v gs =1.8v 82 132 m input capacitance ciss v ds =10v, f=1mhz 430 pf output capacitance coss 59 pf reverse transfer capacitance crss 38 pf turn-on delay time t d (on) see speci ed test circuit. 10 ns rise time t r 41 ns turn-off delay time t d (off) 36 ns fall time t f 37 ns total gate charge qg v ds =15v, v gs =4.5v, i d =3.5a 4.7 nc gate-to-source charge qgs 0.8 nc gate-to-drain ?miller? charge qgd 1.1 nc diode forward voltage v sd i s =3.5a, v gs =0v 0.8 1.2 v [sbd] reverse voltage v r i r =0.5ma 30 v forward voltage v f 1i f =0.7a 0.45 0.5 v v f 2i f =1a 0.48 0.53 v reverse current i r v r =16v 15 a interterminal capacitance c v r =10v, f=1mhz, 1 cycle 27 pf reverse recovery time t rr i f =i r =100ma, see speci ed test circuit. 10 ns switching time test circuit t rr test circuit (mosfet) (sbd) ordering information device package shipping memo cph5871-tl-h cph5 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =2a r l =7.5 v dd =15v v out cph5871 v in 4.5v 0v v in duty 10% 50 100 10 --5v t rr 100ma 100ma 10ma 10 s
cph5871 no. a1401-3/7 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 1.5 1.0 0.5 3.0 2.5 2.0 3.5 4.0 0 it14371 0.1 0.4 0.2 0.6 0.5 0.3 0.8 0.7 0.9 1.0 v gs =1.2v 1.8v 4.5v 2.5v 1.5v 3.5v 7.0 v gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m r ds (on) -- v gs it14372 ta=25 c i d =1a 0.5a 01 56 4 3 2810 79 0 20 40 120 80 60 100 140 2a ambient temperature, ta -- c r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m --60 --40 --20 0 20 40 60 80 100 120 140 160 0 20 60 40 120 140 100 80 v gs =1.8v, i d = 0.5a v gs =4.5v, i d =2.0a v gs =2.5v, i d =1.0a it14373 drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s it14348 ta= --25 c 75 c 25 c v ds =10v 2 2 1.0 7 0.1 5 5 3 7 3 0.1 2 0.01 57 23 3 1.0 2 57 35 [mosfet] [mosfet] [mosfet] [mosfet] i s -- v sd source current, i s -- a diode forward voltage, v sd -- v sw time -- i d switching time, sw time -- ns drain current, i d -- a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf 0 0.4 0.2 0.6 1.2 1.0 0.8 0.01 0.1 7 5 5 3 2 2 1.0 7 5 3 2 7 3 it14349 25 c --25 c ta=75 c v gs =0v 10 7 5 2 5 3 2 3 2 3 100 7 5 0.01 it14350 v dd =15v v gs =4.5v t d (off) t r t f 10 2 0.1 357 2 2357 1.0 357 2 t d (on) 030 10 15 20 25 5 it14351 7 100 5 3 2 7 5 3 2 1000 10 crss coss ciss f=1mhz 06 5 4 3 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 it14374 v ds =15v i d =3.5a [mosfet] [mosfet] [mosfet] [mosfet]
cph5871 no. a1401-4/7 a s o drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w operation in this area is limited by r ds (on). dc operation( ta=25 c ) 100 s 1ms 10ms 100ms it14375 2 3 5 7 2 2 3 5 7 2 3 5 7 0.1 1.0 3 10 0.01 0.1 57 23 57 23 3 2 1.0 10 5 i d =3.5a i dp =14a it14376 0 0 20 40 0.4 0.6 60 80 100 120 140 160 0.2 0.8 0.9 1.0 ta=25 c single pulse when mounted on ceramic substrate (600mm 2 0.8mm)1unit pw 10 s when mounted on ceramic substrate (600mm 2 0.8mm) 1unit 0 it09553 10 0 35 it09554 0.01 2 3 5 7 2 0.1 3 5 7 2 1.0 3 0.4 0.6 0.7 0.1 0.2 0.3 0.5 0.0001 5 5 5 5 5 5 5 5 0.001 0.01 0.1 10 1.0 100 1000 10000 20 15 52530 ta=125 c 75 c 50 c 0 c --25 c ta=125 c 100 c 75 c 50 c 25 c 0 c --25 c 100 c 25 c forward voltage, v f -- v forward current, i f -- a i f -- v f reverse voltage, v r -- v i r -- v r reverse current, i r -- a [mosfet] [mosfet] [sbd] [sbd] 0.1 1.0 100 7 2 10 2 3 5 7 3 23 57 2 10 35 235 7 0 0 0.8 0.7 0.5 0.3 0.6 0.4 0.2 0.1 0.4 1.2 0.8 1.0 0.2 0.6 it09555 it09556 (1) (2) (4) (3) average output current, i o -- a p f (av) -- i o average forward power dissipation, p f (av) -- w reverse voltage, v r -- v c -- v r interterminal capacitance, c -- pf (1)rectangular wave =60 (2)rectangular wave =120 (3)rectangular wave =180 (4)sine wave =180 360 rectangular wave 180 360 sine wave 7 0.01 23 7 0.1 0 52 23 37 1.0 5 12 14 8 4 10 6 2 id00435 i fsm -- t i s 20ms t current waveform 50hz sine wave time, t -- s surge forward current, i fsm (peak) -- a [sbd] [sbd] [sbd]
cph5871 no. a1401-5/7 embossed taping speci cation cph5871-tl-h
cph5871 no. a1401-6/7 outline drawing land pattern example cph5871-tl-h mass (g) unit 0.02 * for reference mm unit: mm 0.6 2.4 1.4 0.95 0.95
cph5871 ps no. a1401-7/7 note on usage : since the cph5871 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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